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(Ebook) Measurement and Modeling of Silicon Heterostructure Devices by John D. Cressler ISBN 9781420066920, 1420066927

  • SKU: EBN-1265656
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Authors:John D. Cressler
Pages:200 pages.
Year:2007
Editon:1
Publisher:CRC-Press
Language:english
File Size:2.81 MB
Format:pdf
ISBNS:9781420066920, 1420066927
Categories: Ebooks

Product desciption

(Ebook) Measurement and Modeling of Silicon Heterostructure Devices by John D. Cressler ISBN 9781420066920, 1420066927

When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook , this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

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