logo
Product categories

EbookNice.com

Most ebook files are in PDF format, so you can easily read them using various software such as Foxit Reader or directly on the Google Chrome browser.
Some ebook files are released by publishers in other formats such as .awz, .mobi, .epub, .fb2, etc. You may need to install specific software to read these formats on mobile/PC, such as Calibre.

Please read the tutorial at this link.  https://ebooknice.com/page/post?id=faq


We offer FREE conversion to the popular formats you request; however, this may take some time. Therefore, right after payment, please email us, and we will try to provide the service as quickly as possible.


For some exceptional file formats or broken links (if any), please refrain from opening any disputes. Instead, email us first, and we will try to assist within a maximum of 6 hours.

EbookNice Team

(Ebook) Fundamentals of Modern VLSI Devices by Yuan Taur, Tak H. Ning ISBN 9780521832946, 0521832942

  • SKU: EBN-1726792
Zoomable Image
$ 32 $ 40 (-20%)

Status:

Available

4.5

12 reviews
Instant download (eBook) Fundamentals of Modern VLSI Devices after payment.
Authors:Yuan Taur, Tak H. Ning
Pages:680 pages.
Year:2009
Editon:2
Publisher:Cambridge University Press
Language:english
File Size:32.05 MB
Format:pdf
ISBNS:9780521832946, 0521832942
Categories: Ebooks

Product desciption

(Ebook) Fundamentals of Modern VLSI Devices by Yuan Taur, Tak H. Ning ISBN 9780521832946, 0521832942

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.
*Free conversion of into popular formats such as PDF, DOCX, DOC, AZW, EPUB, and MOBI after payment.

Related Products